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SPM6G150-060D

Part Number	SPM6G150-060D
Manufacturer	Sensitron
Description	Three-Phase IGBT BRIDGE
Published	May 11, 2007
Detailed Description	SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV A SPM6G150-060D Three-Phase IGBT BRIDGE, With Gate Driver a...
Datasheet	SPM6G150-060D PDF File

Overview

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV A SPM6G150-060D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current com BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES O 600 - - V IC - - 150 130 A - - 250 +/-20 +/- 100 A V nA V...

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SPM6G150-060D Three-Phase IGBT BRIDGE - Sensitron

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