|
Part Number
|
IRF2903ZPBF |
|
Manufacturer
|
International Rectifier |
|
Description
|
AUTOMOTIVE MOSFET |
|
Published
|
May 14, 2007 |
|
Detailed Description
|
PD -96097
AUTOMOTIVE MOSFET
Features
l l l l l l
IRF2903ZPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra...
|
|
Datasheet
|
IRF2903ZPBF
|
Overview
PD -96097
AUTOMOTIVE MOSFET
Features
l l l l l l
IRF2903ZPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 30V RDS(on) = 2.
4mΩ
G S
ID = 75A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for us...
Similar Datasheet