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IRF2903ZPBF

International Rectifier
Part Number IRF2903ZPBF
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published May 14, 2007
Detailed Description PD -96097 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra...
Datasheet PDF File IRF2903ZPBF PDF File

IRF2903ZPBF
IRF2903ZPBF

Overview
PD -96097 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 30V RDS(on) = 2.
4mΩ G S ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D G D S TO-220AB IRF2903ZPbF G D S Gate Drain Source Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous...


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