Part Number
|
IRF2807S |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
May 28, 2007 |
Detailed Description
|
PD - 94170
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l...
|
Datasheet
|
IRF2807S
|
Overview
PD - 94170
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MOSFET
D
IRF2807S IRF2807L
VDSS = 75V RDS(on) = 13mΩ
G S
ID = 82A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package ...
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