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IRF2804L

FreesCale Electronics
Part Number IRF2804L
Manufacturer FreesCale Electronics
Description HEXFET Power MOSFET
Published Apr 9, 2013
Detailed Description IRF2804 IRF2804S/L Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°...
Datasheet PDF File IRF2804L PDF File

IRF2804L
IRF2804L


Overview
IRF2804 IRF2804S/L Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.
0mΩ‰ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A TO-220AB IRF2804 D2Pak IRF2804S TO-262 IRF2804L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG http://www.
DataSheet4U.
net/ Max.
280 200 75 1080 330 2.
2 ± 20 670 1160 See Fig.
12a,12b,15,16 -55 to + 175 Units A Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig.
9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current W W/°C V mJ A mJ °C c i d Repetitive Avalanche Energy Operating Junction and Storage Temperature Range h Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
––– 0.
50 ––– ––– Max.
0.
45 ––– 62 40 Units °C/W Junction-to-Ambient (PCB Mount, steady state) j HEXFET® is a registered trademark of International Rectifier.
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