HEXFET Power MOSFET
PD - 95447 IRG4BC40FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C Fast Speed IGBT VCES = 60...
International Rectifier