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IRG4BC40FPBF

Part Number	IRG4BC40FPBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	May 30, 2007
Detailed Description	PD - 95447 IRG4BC40FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: optimized for medium operating frequencies (...
Datasheet	IRG4BC40FPBF PDF File

Overview

PD - 95447 IRG4BC40FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
50V @VGE = 15V, IC = 27A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum ...

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IRG4BC40FPBF HEXFET Power MOSFET - International Rectifier

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