PD - 95646
IRG4PC40KPbF
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies 5.
0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ.
= 2.
1V
@VGE = 15V, IC = 25A
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Em...