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IRG4PC40KPBF

Part Number	IRG4PC40KPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	May 30, 2007
Detailed Description	PD - 95646 IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high ...
Datasheet	IRG4PC40KPBF PDF File

Overview

PD - 95646 IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.
0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ.
= 2.
1V @VGE = 15V, IC = 25A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Stora...

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IRG4PC40KPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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