FQH90N10V2 100V N-Channel MOSFET
October 2005
QFET
FQH90N10V2 100V N-Channel MOSFET
Features
• 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating
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Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited fo...