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FQH90N10V2

Fairchild Semiconductor
Part Number FQH90N10V2
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 16, 2017
Detailed Description FQH90N10V2 100V N-Channel MOSFET FQH90N10V2 100V N-Channel MOSFET Features • 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • L...
Datasheet PDF File FQH90N10V2 PDF File

FQH90N10V2
FQH90N10V2

Overview
FQH90N10V2 100V N-Channel MOSFET FQH90N10V2 100V N-Channel MOSFET Features • 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating October 2005 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
D GD S TO-247 FQH Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Contin...


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