DC COMPONENTS CO.
, LTD.
R
2SB564A
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for low frequency power amplifier applications.
TO-92
.
190(4.
83) .
170(4.
33) .
190(4.
83) .
170(4.
33) 2 Typ 2 Typ
o o
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
www.
DataSheet4U.
com
.
500 Min (12.
70)
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating -30 -25 -5 -1 800 +150 -55 to +150
Unit V V V A mW
o o 3 2 1 .
050 Typ (1.
27)
.
022(0.
56) .
014(0.
36) .
100 Typ (2.
54)
.
022(0.
56) .
014(0.
36)
.
148(3.
76) .
132(3.
36)
Collector Current
Total Power ...