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2SB561

Renesas
Part Number 2SB561
Manufacturer Renesas
Description Silicon PNP Transistor
Published Jun 25, 2016
Detailed Description 2SB561 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD467 Outline RENESA...
Datasheet PDF File 2SB561 PDF File

2SB561
2SB561

Overview
2SB561 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD467 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) REJ03G0645-0200 (Previous ADE-208-1023) Rev.
2.
00 Aug.
10.
2005 1.
Emitter 2.
Collector 3.
Base Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature 3 2 1 Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –25 –20 –5 –0.
7 –1.
0 0.
5 150 –55 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.
2.
00 Aug 10, 2005 page 1 of 5 2SB561 Electrical Characteristics Item Symbol Min Typ Max Collector to base breakdown voltage V(BR)CBO –25 — — Collector to emitter breakdown voltage V(BR)CEO –20 — — Emitter to base breakdown voltage V(BR)EBO –5 — — Collector cutoff current DC current transfer ratio ICBO — — –1.
0 hFE*1 85 — 240 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance VCE(sat) VBE fT Cob — –0.
2 –0.
5 — –0.
75 –1.
0 — 350 — — 20 — Note: 1.
The 2SB561 is grouped by hFE as follows.
B C 85 to 170 120 to 240 Unit V V V µA V V MHz pF (Ta = 25°C) Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –1 V, IC = –0.
15 A (Pulse test) IC = –0.
5 A, IB = –0.
05 A VCE = –1 V, IC = –0.
15 A VCE = –1 V, IC = –0.
15 A VCB = –10 V, IE = 0 f = 1 MHz Rev.
2.
00 Aug 10, 2005 page 2 of 5 Collector power dissipation PC (W) 2SB561 Main Characteristics Maximum Collector Dissipation Curve 0.
6 0.
4 0.
2 Collector current IC (mA) 0 50 100 150 Ambient Temperature Ta (°C) Typical Transfer Characteristics –1,000 –300 –100 VCE = –1 V –30 Ta = 75°C 25°C –10 –3 –1 0 –0.
2 –0.
4 –0.
6 –0.
8 –1.
0 Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage vs.
Collector Current –0.
5 –0.
4 IC = 10 IB –0.
3 ...


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