PD - 94799
INSULATED GATE BIPOLAR
TRANSISTOR
C
IRGB30B60K IRGS30B60K IRGSL30B60K
VCES = 600V IC = 50A, TC=100°C at TJ=175°C
Features
• • • • • Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
G E
tsc 10µs, TJ=150°C
n-channel
VCE(on) typ.
= 1.
95V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB IRGB30B60K
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D2 Pak IRGS30B60K
TO-262 IRGSL30B60K
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VISOL VG...