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IRGS30B60KPBF

International Rectifier
Part Number IRGS30B60KPBF
Manufacturer International Rectifier
Description Insulated Gate Bipolar Transistor
Published Feb 16, 2016
Detailed Description PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF Features • Low VCE (on) Non P...
Datasheet PDF File IRGS30B60KPBF PDF File

IRGS30B60KPBF
IRGS30B60KPBF

Overview
PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF Features • Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C • Lead-Free C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ=175°C tsc > 10µs, TJ=150°C VCE(on) typ.
= 1.
95V Benefits • Benchmark Efficiency for Motor Control • Rugged Transient Performance • Low EMI • Excellent Current Sharing in Parallel Operation TO-220AB D2Pak TO-262 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current ™ICM Pulse Collector Current (Ref.
Fig.
C.
T.
5) ILM Clamped Inductive Load current VISOL RMS Isolation Voltage, Terminal to Case, t=1 min.
VGE Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100...


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