PD- 94599A
IRGIB15B60KD1
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
G E C
VCES = 600V IC = 12A, TC=100°C tsc 10µs, TJ=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ.
= 1.
80V
Absolute Maximum Ratings
com
TO-220 Full-Pak
Max.
600 19 12 A 38 38 19 12 38 2500 ...