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IRGIB15B60KD1P

International Rectifier
Part Number IRGIB15B60KD1P
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 8, 2016
Detailed Description PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE ...
Datasheet PDF File IRGIB15B60KD1P PDF File

IRGIB15B60KD1P
IRGIB15B60KD1P

Overview
PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C • Lead-Free Benefits • Benchmark Efficiency for Motor Control.
G E n-channel • Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V IC = 12A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ.
= 1.
80V Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC =...


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