PD - 94620B
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
IRGIB7B60KD
C
VCES = 600V IC = 8.
0A, TC=100°C
G E
tsc 10µs, TJ=150°C
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCE(on) typ.
= 1.
8V
TO-220AB FullPak
Absolute Maximum Ratings
Parameter
www.
DataSheet4U.
com
Max.
600 12 8.
0
Units
V A
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @...