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IRGIB7B60KDPBF

International Rectifier
Part Number IRGIB7B60KDPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fea...
Datasheet PDF File IRGIB7B60KDPBF PDF File

IRGIB7B60KDPBF
IRGIB7B60KDPBF

Overview
www.
DataSheet4U.
com PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free G E C VCES = 600V IC = 8.
0A, TC=100°C tsc > 10µs, TJ=150°C n-ch an nel VCE(on) typ.
= 1.
8V Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB FullPak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IF...


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