DC COMPONENTS CO.
, LTD.
R
2SD882D
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for use in output stage of 1W audio amplifier, voltage
regulator, DC-DC converter and relay driver.
Pinning
1 = Emitter 2 = Collector 3 = Base
.
163(4.
12) .
153(3.
87) .
044(1.
12) .
034(0.
87) .
060(1.
52) .
050(1.
27)
TO-126ML
.
146(3.
70) .
136(3.
44)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC)
com
.
148(3.
75) .
138(3.
50)
Symbol VCBO VCEO VEBO IC IC IB
o
Rating 40 30 5 3 7 0.
6 10 1 +150 -55 to +150
Unit V V V A A A W W
o o
.
123(3.
12) .
113(2.
87)
...