Part Number
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M58WR064T |
Manufacturer
|
STMicroelectronics |
Description
|
FLASH MEMORY |
Published
|
Jun 21, 2007 |
Detailed Description
|
M58WR064T M58WR064B
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY...
|
Datasheet
|
M58WR064T
|
Overview
M58WR064T M58WR064B
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.
8V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.
65V to 2.
2V for Program, Erase and Read – VDDQ = 1.
65V to 3.
3V for I/O Buffers – VPP = 12V for fast Program (optional)
s
Figure 1.
Packages
SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode : 52MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 85, 100 ns
FBGA
s
PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options
VFBGA56 (ZB) 7.
7 x 9 mm
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s
MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter ...
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