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M58WR064EB

ST Microelectronics
Part Number M58WR064EB
Manufacturer ST Microelectronics
Description 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
Published Apr 26, 2005
Detailed Description M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAG...
Datasheet PDF File M58WR064EB PDF File

M58WR064EB
M58WR064EB

Overview
M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.
8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.
65V to 2.
2V for Program, Erase and Read – VDDQ = 1.
65V to 3.
3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1.
Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100 ns FBGA s PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options VFBGA56 (ZB) 7.
7 x 9 mm s MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) s ELEC...


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