Part Number
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M58WR064KL |
Manufacturer
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ST Microelectronics |
Description
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Flash memories |
Published
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Jun 21, 2007 |
Detailed Description
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M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Bu...
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Datasheet
|
M58WR064KL
|
Overview
M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.
8 V supply Flash memories
Features
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Supply voltage – VDD = 1.
7 V to 2 V for Program, Erase and Read – VDDQ = 1.
7 V to 2 V for I/O buffers – VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 86 MHz – Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time – 10 µs by Word typical for Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options Memory blocks – Multiple Bank memory array: 4 Mbit Banks – Parameter Blocks (top or bottom location) Dual operati...
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