Part Number
|
IRFU4105Z |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Jul 2, 2007 |
Detailed Description
|
PD - 94752
AUTOMOTIVE MOSFET
IRFR4105Z IRFU4105Z
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technolo...
|
Datasheet
|
IRFU4105Z
|
Overview
PD - 94752
AUTOMOTIVE MOSFET
IRFR4105Z IRFU4105Z
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S
RDS(on) = 24.
5mΩ ID = 30A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use ...
Similar Datasheet