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IRFU4105Z

International Rectifier
Part Number IRFU4105Z
Manufacturer International Rectifier
Description Power MOSFET
Published Jul 2, 2007
Detailed Description PD - 94752 AUTOMOTIVE MOSFET IRFR4105Z IRFU4105Z HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technolo...
Datasheet PDF File IRFU4105Z PDF File

IRFU4105Z
IRFU4105Z

Overview
PD - 94752 AUTOMOTIVE MOSFET IRFR4105Z IRFU4105Z HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 24.
5mΩ ID = 30A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
www.
DataSheet4U.
com D-Pak IRFR4105Z I-Pak IRFU4105Z Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current...


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