Part Number
|
MGF1451A |
Manufacturer
|
Mitsubishi Electric |
Description
|
Low Noise MES FET |
Published
|
Jul 4, 2007 |
Detailed Description
|
Dec./2006
MITSUBISHI SEMICONDUTOR GaAs FET
MGF1451A
Low Noise MES FET
DESCRIPTION
The MGF1451A is designed for use i...
|
Datasheet
|
MGF1451A
|
Overview
Dec.
/2006
MITSUBISHI SEMICONDUTOR GaAs FET
MGF1451A
Low Noise MES FET
DESCRIPTION
The MGF1451A is designed for use in S to Ku band power amplifiers.
Outline Drawing
FEATURES
High gain and High P1dB Glp=10.
5dB , P1dB=13dBm (Typ.
) @ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
IG
Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS
com
(Ta=25°C )
Symbol VGDO VGSO ID PT Tch Tstg
Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
Ratings -8 -8 120 300 175 -55 to +175
(Ta=25°C )
Unit V V mA mW °C °C
Mitsubishi Electric Corporation puts the maximum effo...
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