Dec. /2006
MITSUBISHI SEMICONDUTOR
MGF1451A
Low Noise MES FET
DESCRIPTION
The MGF1451A is designed for use in S to Ku band power amplifiers.
Outline Drawing
FEATURES
High gain and High P1dB Glp=10. 5dB , P1dB=13dBm (Typ. ) @ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
IG
Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS
www. DataSheet4U. com
(Ta=25°C )
Symbol VGDO VGSO ID PT Tch Tstg
Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
Ratings -8 -8 120 300 175 -55 to +175
(Ta=25°C )
Unit V V mA mW °C °C
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , wi...
MGF1451A PDF File
