Part Number
|
MGFC41V7177 |
Manufacturer
|
Mitsubishi Electric |
Description
|
C band internally matched power GaAs FET |
Published
|
Jul 4, 2007 |
Detailed Description
|
C band internally matched power GaAs FET
MGFC41V7177
7.1 – 7.7 GHz BAND / 12W
DESCRIPTION
The MGFC41V7177 is an inte...
|
Datasheet
|
MGFC41V7177
|
Overview
C band internally matched power GaAs FET
MGFC41V7177
7.
1 – 7.
7 GHz BAND / 12W
DESCRIPTION
The MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.
1 – 7.
7 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=12W (TYP.
) @f=7.
1 – 7.
7GHz High power gain
GLP=9.
5dB (TYP.
) @f=7.
1 – 7.
7GHz High power added efficiency
P.
A.
E.
=33% (TYP.
) @f=7.
1 – 7.
7GHz Low distortion [ item -51]
IM3=-45dBc (TYP.
) @Po=30dBm S.
C.
L.
APPLICATION
item 01 : 7.
1 – 7.
7 GHz band power amplifier
QUALITY
IG
OUTLINE DRAWING
Unit: millimeters ...
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