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MGFC41V7177

Mitsubishi Electric
Part Number MGFC41V7177
Manufacturer Mitsubishi Electric
Description C band internally matched power GaAs FET
Published Jul 4, 2007
Detailed Description < C band internally matched power GaAs FET > MGFC41V7177 7.1 – 7.7 GHz BAND / 12W DESCRIPTION The MGFC41V7177 is an inte...
Datasheet PDF File MGFC41V7177 PDF File

MGFC41V7177
MGFC41V7177

Overview
< C band internally matched power GaAs FET > MGFC41V7177 7.
1 – 7.
7 GHz BAND / 12W DESCRIPTION The MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.
1 – 7.
7 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=12W (TYP.
) @f=7.
1 – 7.
7GHz  High power gain GLP=9.
5dB (TYP.
) @f=7.
1 – 7.
7GHz  High power added efficiency P.
A.
E.
=33% (TYP.
) @f=7.
1 – 7.
7GHz  Low distortion [ item -51] IM3=-45dBc (TYP.
) @Po=30dBm S.
C.
L.
APPLICATION  item 01 : 7.
1 – 7.
7 GHz band power amplifier QUALITY  IG OUTLINE DRAWING Unit: millimeters ...


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