Part Number
|
TQPED |
Manufacturer
|
TriQuint Semiconductor |
Description
|
100UA Gain Selectable Amplifier |
Published
|
Jul 8, 2007 |
Detailed Description
|
Pre-Production Process
0.5 um E/D pHEMT Foundry Service
Features
Metal 2 Dielectric Metal 2 - 4um
TQPED
• • • • •
Di...
|
Datasheet
|
TQPED
|
Overview
Pre-Production Process
0.
5 um E/D pHEMT Foundry Service
Features
Metal 2 Dielectric Metal 2 - 4um
TQPED
• • • • •
Dielectric Metal 1 - 2um
Metal 1
Metal 1 Dielectric
MIM Metal
NiCr
Nitride N+ Pseudomorphic Channel
Metal 0
Isolation Implant Isolation Implant MIM Capacitor NiCr Resistor
E-Mode / D-Mode
pHEMT
Semi-Insulating GaAs Substrate
• • • • • •
0.
5 um pHEMT Device Cross-Section
com
E-Mode, 0.
35 V, Vth D-Mode, -0.
8 V Vp InGaAs Active Layer pHEMT Process 0.
5 um Optical Lithography Gates High Density Interconnects: • 2 Global • 1 Local High-Q Passives Thin Film Resistors High Value Capacitors Backside Vias Optional Based on Production TQPHT pHEMT and Intercon...
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