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TQP200002

TriQuint Semiconductor
Part Number TQP200002
Manufacturer TriQuint Semiconductor
Description ESD Protection Circuit
Published Jul 2, 2012
Detailed Description TQP200002 ESD Protection Device Applications     Cellular Handsets Cordless Phone LNBs CATV set top boxes Product F...
Datasheet PDF File TQP200002 PDF File

TQP200002
TQP200002

Overview
TQP200002 ESD Protection Device Applications     Cellular Handsets Cordless Phone LNBs CATV set top boxes Product Features         Snap-Back ESD protection Low clamp voltages 15 or 30 V Low trigger voltages 18, 25, or 41 V Two bidirectional protection lines Fast response time, under 1 ns.
ESD Protection: IEC 61000-4-2, level 1 JEDEC HBM, 8 kV Low capacitance 0.
22 pF Thin Small Leadless SMT Package (A = 1.
8 mm2) Functional Block Diagram General Description The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications.
It delivers bidirectional protection with very low leakage currents and extremely low capacitance.
It is ideally suited for cellular handsets, cordless phones, and broadband applications like CATV set top boxes and LNBs.
Snap-Back Characteristics: Pin Configuration www.
DataSheet.
net/ Symbol VI V2 V3 Function Measured between pin 1 and pin 3.
Measured between pin 1 and pin 2.
Measured between pin 2 and pin 3.
Ordering Information Part No.
TQP200002 TQP200002-PCB-75 TQP200002-PCB-50 Description ESD Protector Diode 75 Ohm Evaluation Board 50 Ohm Evaluation Board Standard T/R size = 10,000 pieces on a 13” reel.
Data Sheet: Rev N 11/11/11 © 2011 TriQuint Semiconductor, Inc.
- 1 of 11Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ TQP200002 ESD Protection Device Specifications Absolute Maximum Ratings Parameter Storage Temperature Total Power Dissipation IEC 61000-4-2 Air Discharge IEC 61000-4-2 Contact Discharge JEDEC Human Body Model (HBM) Recommended Operating Conditions Parameter Vd13 Vd12 Vd23 Tcase TJ (for >106 hours MTTF) Rating -65 to +150 oC 600 mW 3000 V 3000 V 8000 V Min -7 -7 -17 -40 Typ ---- Max Units 7 7 17 85 160 V V V o C o C Operation of this device outside the parameter ranges given above may cause permanent damage.
Electrical specificatio...


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