Part Number
|
NE5510179A |
Manufacturer
|
NEC |
Description
|
3.5V OPERATION SILICON RF POWER MOSFET |
Published
|
Jul 9, 2007 |
Detailed Description
|
PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS
FEATURES
...
|
Datasheet
|
NE5510179A
|
Overview
PRELIMINARY DATA SHEET
3.
5 V OPERATION SILICON RF POWER MOSFET FOR 1.
9 GHZ NE5510179A TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.
5 dBm TYP VDS = 3.
5 V, IDQ = 200 mA, f = 1.
9 GHz, PIN = 22 dBm • HIGH LINEAR GAIN: 11 dB TYP VDS = 3.
5 V, IDQ = 200 mA, f = 1.
9 GHz, PIN = 5dBm • HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.
5 V, IDQ = 200 mA, f = 1.
9 GHz, PIN = 22 dBm • SINGLE SUPPLY: 2.
8 to 6.
0 V • SURFACE MOUNT PACKAGE: 5.
7x5.
7x1.
1 mm MAX
4.
2 Max
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
1.
5 – 0.
2
Source Source
5.
7 Max 0.
6 – 0.
15
X
Gate
Drain
0.
8 – 0.
15 4.
4 Max
Gate
1.
0 Max
Drain
1.
2 Max
0.
8 Max 3.
6 – 0.
2
5.
7 Max
8
0.
4 – 0.
15
DESCRIPTION
The NE5510179A is an ...
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