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NE5510179A

NEC
Part Number NE5510179A
Manufacturer NEC
Description 3.5V OPERATION SILICON RF POWER MOSFET
Published Jul 9, 2007
Detailed Description PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES ...
Datasheet PDF File NE5510179A PDF File

NE5510179A
NE5510179A

Overview
PRELIMINARY DATA SHEET 3.
5 V OPERATION SILICON RF POWER MOSFET FOR 1.
9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.
5 dBm TYP VDS = 3.
5 V, IDQ = 200 mA, f = 1.
9 GHz, PIN = 22 dBm • HIGH LINEAR GAIN: 11 dB TYP VDS = 3.
5 V, IDQ = 200 mA, f = 1.
9 GHz, PIN = 5dBm • HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.
5 V, IDQ = 200 mA, f = 1.
9 GHz, PIN = 22 dBm • SINGLE SUPPLY: 2.
8 to 6.
0 V • SURFACE MOUNT PACKAGE: 5.
7x5.
7x1.
1 mm MAX 4.
2 Max OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 1.
5 – 0.
2 Source Source 5.
7 Max 0.
6 – 0.
15 X Gate Drain 0.
8 – 0.
15 4.
4 Max Gate 1.
0 Max Drain 1.
2 Max 0.
8 Max 3.
6 – 0.
2 5.
7 Max 8 0.
4 – 0.
15 DESCRIPTION The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.
5 V GSM1800 and GSM 1900 handsets.
Dies are manufactured using NEC's NEWMOS technology (NEC's 0.
6 µm WSi gate lateral MOSFET) and housed in a surface mount package.
This device can deliver 29.
5 dBm output power with 50% power added efficiency at 1.
9 GHz under the 3.
5 V supply voltage, or can deliver 29 dBm output power at 2.
8 V by varying the gate voltage as a power control function.
APPLICATIONS • DIGITAL CELLULAR PHONES: 3.
5 V GSM 1800/GSM 1900 Class 1 Handsets • OTHERS: 1.
6 - 2.
0 GHz TDMA Applications ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS VTH gm RDS (ON) BVDSS CHARACTERISTICS Gate-to-Source Leakage Current Drain-to-Source Leakage Current Gate Threshold Voltage Transconductance Drain-to-Source On Resistance Drain-to-Source Breakdown Voltage V = 25°C) NE5510179A 79A UNITS nA nA V S MIN TYP 0.
9 – 0.
2 MAX 100 100 0.
2 – 0.
1 TEST CONDITIONS VGSS = 6.
0 V VDSS = 8.
5 V VDS = 3.
5 V, IDS = 1 mA VDS = 3.
5 V, IDS1 = 300 mA, IDS2 = 500 mA VGS = 6.
0 V, VDS = 0.
5 V IDSS = 10 A 1.
0 1.
35 0.
82 0.
5 2.
0 20 24 California Eastern Laboratories NE5510179A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS VDS VGS ID ID PIN PT TCH TSTG PARAMETERS Drain Supply ...


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