TRANSCOM
TC1101
January 2002
Low Noise and Medium Power GaAs FETs
FEATURES • • • • • • • Low Noise Figure: NF = 0.
5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.
25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT
DESCRIPTION The TC1101 is a GaAs Pseudomorphic High Electron Mobility
Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range.
The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide rang...