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TC1102

Transcom
Part Number TC1102
Manufacturer Transcom
Description Super Low Noise GaAs FETs
Published Jul 9, 2007
Detailed Description TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 G...
Datasheet PDF File TC1102 PDF File

TC1102
TC1102

Overview
TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • Low Noise Figure: NF = 0.
5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.
25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain.
The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications.
All devices are 100% DC tested to assure consistent quality.
All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 2 V, IDS = 10 mA,, f = 12GHz Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.
32 mA Drain-Gate Breakdown Voltage at IDGO =0.
08 mA Thermal Resistance MIN 11 TYP 0.
5 13 40 55 -1.
0 8 90 MAX 0.
7 UNIT dB dB mA mS Volts Volts °C/W 5 TRANSCOM, INC.
, 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.
O.
C.
Web-Site: www.
transcominc.
com.
tw Phone: 886-6-5050086 Fax: 886-6-5051602 9 TC1102 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 5V -3.
0 V IDSS 160 µA 14 dBm 150 mW 175 °C - 65 °C to +175 °C TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 2 V, IDS = 10 mA Frequency NFopt (GHz) (dB) 2 0.
30 4 0.
32 6 0.
34 8 0.
37 10 0.
42 12 0.
47 14 0.
56 16 0.
70 18 0.
87 GA (dB) 19.
0 17.
4 15.
7 14.
3 12.
9 11.
9 11.
4 11.
2 10.
9 Γopt MAG 0.
98 0.
84 0.
68 0.
51 0.
38 0.
28 0.
25 0.
32 0.
49 ANG 15 30 50 76 107 146 193...


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