Part Number
|
TIM3742-25UL |
Manufacturer
|
Toshiba Semiconductor |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Jul 10, 2007 |
Detailed Description
|
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM3742-25UL
TECHNICAL DATA FEATURES
n HIGH POWER P1dB=44.5dBm at 3.7...
|
Datasheet
|
TIM3742-25UL
|
Overview
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM3742-25UL
TECHNICAL DATA FEATURES
n HIGH POWER P1dB=44.
5dBm at 3.
7GHz to 4.
2GHz n HIGH GAIN G1dB=10.
5dB at 3.
7GHz to 4.
2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion
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DataSheet4U.
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SYMBOL P1dB G1dB IDS1 ∆G
CONDITIONS
UNIT dBm dB A dB %
MIN.
43.
5 9.
5 -44
TYP.
MAX.
44.
5 10.
5 6.
8 38 -47 6.
8 7.
6 ±0.
6 7.
6 80
VDS= 10V
f = 3.
7 to 4.
2GHz
ηadd
IM3 IDS2 ∆Tch Two-...
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