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TIM3742-25UL

Part Number	TIM3742-25UL
Manufacturer	Toshiba Semiconductor
Description	MICROWAVE POWER GaAs FET
Published	Jul 10, 2007
Detailed Description	MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-25UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 3.7...
Datasheet	TIM3742-25UL PDF File

Overview

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-25UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.
5dBm at 3.
7GHz to 4.
2GHz n HIGH GAIN G1dB=10.
5dB at 3.
7GHz to 4.
2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion www.
DataSheet4U.
com SYMBOL P1dB G1dB IDS1 ∆G CONDITIONS UNIT dBm dB A dB % MIN.
43.
5 9.
5    -44   TYP.
MAX.
44.
5 10.
5 6.
8  38 -47 6.
8    7.
6 ±0.
6   7.
6 80 VDS= 10V f = 3.
7 to 4.
2GHz ηadd IM3 IDS2 ∆Tch Two-...

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TIM3742-25UL MICROWAVE POWER GaAs FET - Toshiba Semiconductor

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