PRELIMINARY DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SJ601
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect
Transistor designed for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER 2SJ601 2SJ601-Z PACKAGE TO-251 TO-252
FEATURES
• Low on-state resistance: RDS(on)1 = 31 mΩ MAX.
(VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX.
(VGS = –4.
0 V, ID = –18 A) • Low Ciss: Ciss = 3300 pF TYP.
• Built-in gate protection diode • TO-251/TO-252 package (TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VGS = 0 V)
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VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
–60
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