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Part Number
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2SJ605 |
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Manufacturer
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NEC |
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Title
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MOS FIELD EFFECT TRANSISTOR |
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Description
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The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications...
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Features
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• Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID...
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Published
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Jul 12, 2007 |
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Datasheet
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2SJ605 PDF File
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Features
• Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A)
• Low input capacitance ! Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)
• Built-in gate protection diode
Note TO-220SMD ...
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