Ordering number : ENN7420 2SJ632 P-Channel Silicon MOSFET 2SJ632 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2062A [2SJ632] 4.
5 1.
6 1.
5 Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
0.
5 3 1.
5 2 3.
0 (Bottom view) 1 1.
0 0.
4 2.
5 4.
25max 0.
4 0.
75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C com Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings -60 ±20 --2 Unit V V A A W W °C °C PW≤10µs, duty cycle≤...

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