Ordering number : ENN8282 2SJ646 P-Channel Silicon MOSFET 2SJ646 Features • • • General-Purpose Switching Device Applications Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation www.
DataSheet4U.
com Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --30 ±20 --8 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Tc=25°C --32 1 15 150 --55 to +150 Channel Temperature Storage Temperature Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate...

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