DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SJ648
P-CHANNEL MOS FIELD EFFECT
TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ648 is a switching device which can be driven directly by a 2.
5 V power source.
The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
1.
6 ± 0.
1 0.
8 ± 0.
1
PACKAGE DRAWING (Unit: mm)
0.
3 +0.
1 –0 0.
15 +0.
1 –0.
05
3 0 to 0.
1 2 0.
2 0.
5
+0.
1 –0
FEATURES
• 2.
5 V drive available • Low on-state resistance RDS(on)1 = 1.
45 Ω MAX.
(VGS = −4.
5 V, ID = −0.
2 A) RDS(on)2 = 1.
55 Ω MAX.
(VGS = −4.
0 V, ID = −0.
2 A) RDS(on)3 = 2.
98 Ω MAX.
(VGS = −2.
5 V, ID = −0.
15 A)
1
0.
5
...