Part Number
|
2SJ667 |
Manufacturer
|
Sanyo Semicon Device |
Description
|
P-Channel MOSFET |
Published
|
Jul 12, 2007 |
Detailed Description
|
Ordering number : ENN8248
2SJ667
P-Channel Silicon MOSFET
2SJ667
Features
• • • • •
General-Purpose Switching Device...
|
Datasheet
|
2SJ667
|
Overview
Ordering number : ENN8248
2SJ667
P-Channel Silicon MOSFET
2SJ667
Features
• • • • •
General-Purpose Switching Device Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
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Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV
Conditions
Ratings --100 ±20 --42
Unit V V A A W W °C °C mJ A
PW≤10µs, duty cycle≤1% Tc=25°C
--168 2.
5 100 150 --55 to +150 58 --42
Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single...
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