Part Number
|
K4S510432M |
Manufacturer
|
Samsung semiconductor |
Description
|
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL |
Published
|
Jul 14, 2007 |
Detailed Description
|
K4S510432M
Preliminary CMOS SDRAM
512Mbit SDRAM
32M x 4bit x 4 Banks Synchronous DRAM LVTTL
www.DataSheet4U.com
Revi...
|
Datasheet
|
K4S510432M
|
Overview
K4S510432M
Preliminary CMOS SDRAM
512Mbit SDRAM
32M x 4bit x 4 Banks Synchronous DRAM LVTTL
www.
DataSheet4U.
com
Revision 0.
2 Dec.
2001
Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
2 Dec.
2001
K4S510432M
Revision History
Revision 0.
0 (Mar.
2001) Revision 0.
1 (Aug.
2001)
Defined target DC characteristics.
Preliminary CMOS SDRAM
Revision 0.
2 (Dec.
2001)
• • Changed "Target" to "Preliminary".
Redefined DC characteristics.
Rev.
0.
2 Dec.
2001
K4S510432M
32M x 4Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key progra...
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