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K4S510432B-TC75

Part Number	K4S510432B-TC75
Manufacturer	Samsung semiconductor
Description	512Mb B-die SDRAM Specification
Published	Apr 7, 2005
Detailed Description	SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Elec...
Datasheet	K4S510432B-TC75 PDF File

Overview

SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.
1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.
1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) Revision History Revision 1.
0 (January, 2004) - First release.
Revision 1.
1 (February, 2004) - Corrected typo.
CMOS SDRAM Rev.
1.
1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Bur...

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