GaAs Flip Chip
Schottky Barrier Diodes
Features
• • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion
MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1
MA4E1317
Description and Applications
M/A-COM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip
Schottky barrier diodes.
These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.
The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scra...