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MA4E1310

MA-COM
Part Number MA4E1310
Manufacturer MA-COM
Description GaAs Flip Chip Schottky Barrier Diode
Published Mar 23, 2019
Detailed Description MA4E1310 GaAs Flip Chip Schottky Barrier Diode Features  Low Series Resistance  Low Capacitance  High Cutoff Frequenc...
Datasheet PDF File MA4E1310 PDF File

MA4E1310
MA4E1310

Overview
MA4E1310 GaAs Flip Chip Schottky Barrier Diode Features  Low Series Resistance  Low Capacitance  High Cutoff Frequency  Silicon Nitride Passivation  Polyimide Scratch Protection  Designed for Easy Circuit Insertion Description M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode.
This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics.
This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection.
The protective coatings prevent damage to the junction during automated or manual handling.
The flip chip configuration is suitable for pick...


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