TIM5359-45SL

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-45SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at ...