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TIM5359-45SL

Part Number	TIM5359-45SL
Manufacturer	Toshiba Semiconductor
Description	MICROWAVE POWER GaAs FET
Published	Jul 22, 2007
Detailed Description	FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 9.0dB at 5.3G...
Datasheet	TIM5359-45SL PDF File

Overview

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.
5dBm at 5.
3GHz to 5.
9GHz ･HIGH GAIN G1dB= 9.
0dB at 5.
3GHz to 5.
9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.
5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-45SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.
0A f = 5.
3 to 5.
9GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 35.
5dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 28  MIN.
46.
0 8.
0    -42   TYP.
MAX.
46.
5  9.
0  9.
6 10.
8  ±0.
8 41  -45  9.
6 10.
8  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 11.
0A VDS= 3V IDS= 170mA VDS= 3V VGS= 0V VGSO IGS= -500A Rth(c-c) Channel to Case UNIT MIN.
TYP.
MAX.
S  8.
0  V -1.
0 -2.
5 -4.
0 A  24  V -5   °C/W  0.
8 1.
2  The information contained herein is presented as guidance for product use.
No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product.
No license to any intellectual property right is granted by this document.
The information contained herein is subject to change without prior notice.
It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
Copyright © 2017 TOSHIBA INFRASTURCTURE SYSTEMS & SOLUTIONS CORPORATION...

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TIM5359-45SL MICROWAVE POWER GaAs FET - Toshiba Semiconductor

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