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NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
• • • • HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz HIGH IP3: 32 dBm TYP at 1 GHz
NE856M02
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M02
BOTTOM VIEW
4.
5±0.
1 1.
6±0.
2
1.
5±0.
1
NEC's NE856M02 is an
NPN silicon epitaxial bipolar
transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion.
This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitr...